Integrated Circuits (ICs)

FBS-GAM02P-R-PSE

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IC GATE DRVR HI/LOW SIDE 18SMD

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Integrated Circuits (ICs)

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IC GATE DRVR HI/LOW SIDE 18SMD

Technical Specifications

Parameters and characteristics for this part

Specification	FBS-GAM02P-R-PSE

Channel Type	Independent
Driven Configuration	High-Side and Low-Side
Gate Type	N-Channel MOSFET, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	100 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.9 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	130 °C
Operating Temperature [Min]	-55 ░C
Package / Case	18-SMD Module
Rise / Fall Time (Typ)	22 ns, 35 ns
Supplier Device Package	Module
Voltage - Supply [Max]	50 V, 5.5 V
Voltage - Supply [Min]	4.5 V, 5 V

Part	Gate Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Package / Case	Channel Type	Mounting Type	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rise / Fall Time (Typ)	Voltage - Supply [Max]	Voltage - Supply [Min]	Input Type
EPC Space, LLC FBS-GAM02P-R-PSE	MOSFET (N-Channel) N-Channel MOSFET	0.8 V 2.9 V	100 V	High-Side and Low-Side	18-SMD Module	Independent	Surface Mount	2	130 °C	-55 ░C	Module	22 ns 35 ns	5.5 V 50 V	4.5 V 5 V	Non-Inverting

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side and Low-Side Gate Driver IC Non-Inverting Module

Technical documentation and resources