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FBS-GAM02P-R-PSE
Integrated Circuits (ICs)

FBS-GAM02P-R-PSE

Active
EPC Space, LLC

IC GATE DRVR HI/LOW SIDE 18SMD

FBS-GAM02P-R-PSE
Integrated Circuits (ICs)

FBS-GAM02P-R-PSE

Active
EPC Space, LLC

IC GATE DRVR HI/LOW SIDE 18SMD

Technical Specifications

Parameters and characteristics for this part

SpecificationFBS-GAM02P-R-PSE
Channel TypeIndependent
Driven ConfigurationHigh-Side, Low-Side
Fall Time (Typ)22 ns
Gate ChannelN-Channel
Gate TypeN-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)100 V
Input TypeNon-Inverting
Logic Voltage - VIH2.9 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)130 °C
Operating Temperature (Min)-55 °C
Package / Case18-SMD Module
Package NameModule
Rise Time (Typ)35 ns
Voltage - Supply (Range 1 Maximum)5.5 V
Voltage - Supply (Range 1 Minimum)4.5 V
Voltage - Supply (Range 2 Maximum)50 V
Voltage - Supply (Range 2 Minimum)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1$ 742.50<6d

CAD

3D models and CAD resources for this part

Description

General part information

FBS-GAM02P Series

High-Side and Low-Side Gate Driver IC Non-Inverting Module

Documents

Technical documentation and resources