Discrete Semiconductor Products

MB3035S-E3/8W

Obsolete

DIODE SCHOTTKY 35V 30A TO263AB

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Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 35V 30A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	MB3035S-E3/8W

Capacitance @ Vr, F	980 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Technology	Package / Case	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type
Vishay General Semiconductor - Diodes Division MB3035S-E3/4W	700 mV	980 pF	30 A	35 V	150 °C	-65 C	200 mA 500 ns	Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 µA	TO-263AB (D2PAK)	Surface Mount
Vishay General Semiconductor - Diodes Division MB3035S-E3/8W	700 mV	980 pF	30 A	35 V	150 °C	-65 C	200 mA 500 ns	Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 µA	TO-263AB (D2PAK)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 35 V 30A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources