Discrete Semiconductor Products

NTP5862NG

Obsolete

MOSFET N-CH 60V 98A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 98A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	NTP5862NG

Current - Continuous Drain (Id) @ 25°C	98 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	82 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Power MOSFET 60V 97A 7.8 mOhm Single N-Channel TO-220

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	FET Type	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTP5862NG	Through Hole	-55 °C	175 ░C	4 V	98 A	5.7 mOhm	TO-220	82 nC	60 V	6000 pF	MOSFET (Metal Oxide)	TO-220-3	N-Channel
ON Semiconductor NTP5863NG	Through Hole	-55 °C	175 ░C	4 V	97 A	7.8 mOhm	TO-220		60 V	3200 pF	MOSFET (Metal Oxide)	TO-220-3	N-Channel	150 W	20 V	55 nC	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 60 V, 97 A, 7.8 mOhms, TO-220

Technical documentation and resources

No documents available