Discrete Semiconductor Products

SI3437DV-T1-E3

Active

MOSFET P-CH 150V 1.4A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 150V 1.4A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3437DV-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	2 W, 3.2 W
Rds On (Max) @ Id, Vgs [Max]	750 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division SI3437DV-T1-E3	MOSFET (Metal Oxide)	6-TSOP	20 V	750 mOhm	-55 °C	150 °C	19 nC	2 W 3.2 W	6 V 10 V	150 V	4 V	510 pF	Surface Mount	P-Channel	1.4 A	SOT-23-6 Thin TSOT-23-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP

Technical documentation and resources