Discrete Semiconductor Products

R6020835ESYA

Unknown

DIODE GP 800V 350A DO205AB DO9

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Discrete Semiconductor Products

Unknown

DIODE GP 800V 350A DO205AB DO9

Technical Specifications

Parameters and characteristics for this part

Specification	R6020835ESYA

Current - Average Rectified (Io)	350 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-45 °C
Package / Case	DO-9, DO-205AB, Stud
Reverse Recovery Time (trr)	2 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-205AB
Supplier Device Package	DO-9
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.5 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Supplier Device Package	Package / Case	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]
Powerex Inc. R6020835ESYA	800 V	200 mA 500 ns	2 µs	Chassis Stud Mount	50 mA	DO-205AB	DO-9	DO-205AB DO-9 Stud	Standard	350 A	150 °C	-45 °C	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 52.40

General part information

Diode 800 V 350A Chassis, Stud Mount DO-205AB (DO-9)

Technical documentation and resources