Discrete Semiconductor Products

PJD85N03_L2_00001

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30V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD85N03_L2_00001

Current - Continuous Drain (Id) @ 25°C	16 A, 85 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	2436 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	58 W, 2 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	FET Type	Qualification	Grade	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
Panjit International Inc. PJD85N03-AU_L2_000A1	2.5 V	Surface Mount	4.5 V 10 V	3.8 mOhm	MOSFET (Metal Oxide)	TO-252AA	N-Channel	AEC-Q101	Automotive	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	2 W 58 W	16 A 85 A	2436 pF	23 nC	20 V
Panjit International Inc. PJD85N03_L2_00001	2.5 V	Surface Mount	4.5 V 10 V	3.8 mOhm	MOSFET (Metal Oxide)	TO-252	N-Channel			30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	2 W 58 W	16 A 85 A	2436 pF	23 nC	20 V

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General part information

N-Channel 30 V 16A (Ta), 85A (Tc) 2W (Ta), 58W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available