Discrete Semiconductor Products

NP160N04TUG-E1-AY

Active

MOSFET N-CH 40V 160A TO263-7

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 40V 160A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	NP160N04TUG-E1-AY

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds	15750 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	220 W, 1.8 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation NP160N04TUG-E1-AY	175 °C	Surface Mount	N-Channel	2 mOhm	D2PAK TO-263-7	MOSFET (Metal Oxide)	270 nC	TO-263-7	160 A	15750 pF	20 V	4 V	1.8 W 220 W	10 V	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 160A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-7

Technical documentation and resources