Discrete Semiconductor Products

PSMN2R2-30YLC,115

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MOSFET N-CH 30V 100A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 30V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R2-30YLC,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	3310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	141 W
Rds On (Max) @ Id, Vgs	2.15 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Freescale Semiconductor - NXP PSMN2R2-40BS,118	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	Surface Mount	20 V	N-Channel	D2PAK	100 A	306 W	40 V	2.2 mOhm	130 nC
Freescale Semiconductor - NXP PSMN2R2-30YLC,115	-55 °C	175 ░C	SC-100 SOT-669	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	20 V	N-Channel	LFPAK56 Power-SO8	100 A		30 V	2.15 mOhm		3310 pF	55 nC	141 W

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General part information

N-Channel 30 V 100A (Tc) 141W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources