Discrete Semiconductor Products

SCS310AHGC9

NRND

DIODE SIL CARB 650V 10A TO220ACP

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Discrete Semiconductor Products

NRND

DIODE SIL CARB 650V 10A TO220ACP

Technical Specifications

Parameters and characteristics for this part

Specification	SCS310AHGC9

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.5 V

Part	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Technology	Speed	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor SCS310AHGC9	175 ░C	50 µA	SiC (Silicon Carbide) Schottky	500 mA	TO-220-2	0 ns	10 A	Through Hole	1.5 V	500 pF	TO-220ACP	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Through Hole TO-220ACP

Technical documentation and resources

No documents available