Discrete Semiconductor Products

SCS310AHGC9

NRND

DIODE SIL CARB 650V 10A TO220ACP

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Discrete Semiconductor Products

NRND

DIODE SIL CARB 650V 10A TO220ACP

Technical Specifications

Parameters and characteristics for this part

Specification	SCS310AHGC9

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor SCS310AHGC9	SiC (Silicon Carbide) Schottky	50 µA	175 °C	Through Hole	10 A	0 ns	TO-220-2	TO-220ACP	1.5 V	No Recovery Time	500 pF	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Through Hole TO-220ACP

Technical documentation and resources

No documents available