Discrete Semiconductor Products

UF304G_R2_00001

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GLASS PASSIVATED JUNCTION ULTRAF

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Discrete Semiconductor Products

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GLASS PASSIVATED JUNCTION ULTRAF

Technical Specifications

Parameters and characteristics for this part

Specification	UF304G_R2_00001

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Mounting Type	Capacitance @ Vr, F	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Current - Reverse Leakage @ Vr
Panjit International Inc. UF304G_R2_00001	Through Hole	50 pF	DO-201AD	-55 °C	150 °C	1.3 V	Standard	50 ns	3 A	400 V	DO-201AD Axial	200 mA 500 ns	1 µA

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General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources