Discrete Semiconductor Products

MCG10N15A-TP

Obsolete

MCG10N15A-TP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MCG10N15A-TP

Technical Specifications

Parameters and characteristics for this part

Specification	MCG10N15A-TP

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1182 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	20.8 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	DFN3030-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	FET Type
Micro Commercial Components MCG10N15A-TP	65 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	150 V	22 nC	6 V 10 V	8-PowerWDFN	4 V	DFN3030-8	10 A	25 V	Surface Mount	1182 pF	20.8 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 10A 20.8W Surface Mount DFN3030-8

Technical documentation and resources