S8CMHM3/I

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DIODE GEN PURP 1KV 8A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 1KV 8A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S8CMHM3/I

Capacitance @ Vr, F	79 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 çA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	4 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	985 mV

Part	Speed	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Grade
Vishay General Semiconductor - Diodes Division S8CM-M3/I	Standard Recovery >500ns	200 mA	10 çA	4 µs	Surface Mount	DO-214AB (SMC)	Standard	DO-214AB SMC	985 mV	79 pF	8 A	1000 V	150 °C	-55 °C
Vishay General Semiconductor - Diodes Division S8CMHM3/I	Standard Recovery >500ns	200 mA	10 çA	4 µs	Surface Mount	DO-214AB (SMC)	Standard	DO-214AB SMC	985 mV	79 pF	8 A	1000 V	150 °C	-55 °C	AEC-Q101	Automotive

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General part information

Diode 1000 V 8A Surface Mount DO-214AB (SMC)

Technical documentation and resources