Discrete Semiconductor Products

PSDF3060L1_T0_00001

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RECTIFIERS 60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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RECTIFIERS 60V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PSDF3060L1_T0_00001

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	115 ns
Speed	500 ns, 200 mA
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Technology	Current - Average Rectified (Io)	Speed	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]
Panjit International Inc. PSDF3060S1_T0_00001	2.3 V	250 µA	ITO-220AC	600 V	Through Hole	-55 °C	150 °C	TO-220-2 Full Pack Isolated Tab	Standard	30 A	200 mA 500 ns	70 ns
Panjit International Inc. PSDF3060L1_T0_00001		250 µA	ITO-220AC	600 V	Through Hole	-55 °C	150 °C	TO-220-2 Full Pack Isolated Tab	Standard	30 A	200 mA 500 ns	115 ns	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 30A Through Hole ITO-220AC

Technical documentation and resources