Discrete Semiconductor Products

SI2314EDS-T1-GE3

LTB

MOSFET N-CH 20V 3.77A SOT23-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 20V 3.77A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2314EDS-T1-GE3

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI2314EDS-T1-GE3	950 mV	Surface Mount	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	33 mOhm	1.8 V 4.5 V	750 mW	12 V	-55 °C	150 °C	20 V	SOT-23-3 (TO-236)	14 nC	N-Channel

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General part information

N-Channel 20 V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources