Discrete Semiconductor Products

1N3883R

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DIODE GEN PURP REV 400V 6A DO4

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Discrete Semiconductor Products

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DIODE GEN PURP REV 400V 6A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3883R

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-4
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	6 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.4 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Speed	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor 1N3883R	400 V	DO-4	DO-203AA DO-4 Stud	150 °C	-65 C	Chassis Stud Mount	Reverse Polarity Standard	200 mA 500 ns	6 A	200 ns	1.4 V	6 A	15 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 6A Chassis, Stud Mount DO-4

Technical documentation and resources