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2SC3380ASTR-E
Discrete Semiconductor Products

2SC3380ASTR-E

Obsolete
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

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Search across all available documentation for this part.

2SC3380ASTR-E
Discrete Semiconductor Products

2SC3380ASTR-E

Obsolete
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2SC3380ASTR-E
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1 W
Supplier Device PackageUPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 16000$ 0.48

Description

General part information

2SC3380 Series

Small Signal Bipolar Transistors

Documents

Technical documentation and resources