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SOD-106_PMDS
Discrete Semiconductor Products

RFN1L7STE25

NRND
Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDS

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SOD-106_PMDS
Discrete Semiconductor Products

RFN1L7STE25

NRND
Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRFN1L7STE25
Current - Average Rectified (Io)800 mA
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)80 ns
Speed500 ns, 200 mA
Supplier Device PackagePMDS
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]700 V
Voltage - Forward (Vf) (Max) @ If [Max]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
Digi-Reel® 1$ 0.47
N/A 0$ 0.61
Tape & Reel (TR) 1500$ 0.14
3000$ 0.13
7500$ 0.12
10500$ 0.11
37500$ 0.11
75000$ 0.10

Description

General part information

RFN1L7 Series

ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.

Documents

Technical documentation and resources