Discrete Semiconductor Products

MUR415GP-TP

NRND

DIODE GEN PURP 150V 4A DO201AD

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 150V 4A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	MUR415GP-TP

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Capacitance @ Vr, F	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type
Micro Commercial Components MUR415GP-AP	4 A	DO-201AD	1 V	Standard	DO-201AD Axial	80 pF	200 mA 500 ns	150 °C	-55 °C	45 ns	10 µA	Through Hole
Micro Commercial Components MUR415GP-TP	4 A	DO-201AD	1 V	Standard	DO-201AD Axial	80 pF	200 mA 500 ns	150 °C	-55 °C	45 ns	10 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 150 V 4A Through Hole DO-201AD

Technical documentation and resources