Discrete Semiconductor Products

BUK7Y8R7-60EX

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BUK7Y8R7-60E - N-CHANNEL 60 V, 8.7 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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BUK7Y8R7-60E - N-CHANNEL 60 V, 8.7 MΩ STANDARD LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y8R7-60EX

Current - Continuous Drain (Id) @ 25°C	87 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3159 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	147 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.7 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Qualification	Vgs (Max)	Rds On (Max) @ Id, Vgs	Grade	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP BUK7Y8R7-60EX	147 W	60 V	Surface Mount	87 A	3159 pF	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	-55 °C	175 ░C	SC-100 SOT-669	AEC-Q101	20 V	8.7 mOhm	Automotive	N-Channel	10 V	46 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 87A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources