Discrete Semiconductor Products

SSM3K35AFS,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-416(SSM)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-416(SSM)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K35AFS,LF

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-416, SC-75
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	SSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-416(SSM)

Part	Vgs(th) (Max) @ Id	FET Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage SSM3K35AFS,LF	1 V	N-Channel	MOSFET (Metal Oxide)	10 V	250 mA	500 mW	20 V	SC-75 SOT-416	Surface Mount	36 pF	150 °C	1.1 Ohm	SSM	1.2 V	4.5 V	0.34 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5084	$ 0.20

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SOT-416(SSM)

Technical documentation and resources