Discrete Semiconductor Products

GAN063-650WSAQ

LTB

GANFET N-CH 650V 34.5A TO247-3

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Discrete Semiconductor Products

LTB

GANFET N-CH 650V 34.5A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	GAN063-650WSAQ

Current - Continuous Drain (Id) @ 25°C	34.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	143 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type
Freescale Semiconductor - NXP GAN063-650WSAQ	GaNFET (Cascode Gallium Nitride FET)	650 V	34.5 A	143 W	TO-247-3	4.5 V	1000 pF	TO-247-3	-55 °C	175 ░C	20 V	10 V	60 mOhm	Through Hole	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 34.5A (Tc) 143W (Tc) Through Hole TO-247-3

Technical documentation and resources