Discrete Semiconductor Products

SFS1004G MNG

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DIODE GEN PURP 200V 10A TO263AB

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 10A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFS1004G MNG

Capacitance @ Vr, F	70 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation SFS1004G MNG	Surface Mount	200 V	975 mV	10 A	Standard	200 mA 500 ns	TO-263AB (D2PAK)	1 µA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	70 pF	35 ns	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 10A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources

No documents available