Discrete Semiconductor Products

PMV60EN,215

Obsolete

MOSFET N-CH 30V 4.7A TO236AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 4.7A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV60EN,215

Current - Continuous Drain (Id) (Tc)	4.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.4 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23 (TO-236AB)
Power Dissipation (Max)	280 mW
Rds On (Max)	55 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

Part	Package Name	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package / Case	FET Type	Technology	Power Dissipation (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
NXP USA Inc. PMV62XN,215
NXP USA Inc. PMV60EN,215	SOT-23 (TO-236AB)	Surface Mount	4.7 A	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)	280 mW	9.4 nC	30 V	20 V	10 V	4.5 V	2 V	350 pF	-55 °C	150 °C	55 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 4.7A (Tc) 280mW (Tj) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources

No documents available