Discrete Semiconductor Products

PMV60EN,215

Obsolete

MOSFET N-CH 30V 4.7A TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 4.7A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV60EN,215

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	280 mW
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	SOT-23 (TO-236AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PMV62XN,215
Freescale Semiconductor - NXP PMV60EN,215	Surface Mount	9.4 nC	20 V	4.7 A	N-Channel	2 V	MOSFET (Metal Oxide)	55 mOhm	SC-59 SOT-23-3 TO-236-3	30 V	-55 °C	150 °C	4.5 V 10 V	280 mW	SOT-23 (TO-236AB)	350 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 4.7A (Tc) 280mW (Tj) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources

No documents available