Discrete Semiconductor Products

SI7236DP-T1-E3

Obsolete

MOSFET 2N-CH 20V 60A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7236DP-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	46 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Technology	Mounting Type	Vgs(th) (Max) @ Id	Configuration	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7236DP-T1-E3	4000 pF	20 V	-55 °C	150 °C	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	Surface Mount	1.5 V	2 N-Channel (Dual)	5.2 mOhm	46 W	60 A	105 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources