Discrete Semiconductor Products

FDP075N15A

Obsolete

ON Semiconductor

MOSFET N-CH 150V 130A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FDP075N15A

Obsolete

ON Semiconductor

MOSFET N-CH 150V 130A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDP075N15A

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	7350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP075N15A Series

N-Channel PowerTrench<sup>®</sup> MOSFET 150V, 130A, 7.5mΩ

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDP075N15A-F102	TO-220-3	-55 °C	175 ░C	N-Channel	100 nC	4 V	20 V	333 W	130 A	10 V	TO-220-3	7.5 mOhm	Through Hole	150 V	MOSFET (Metal Oxide)	7350 pF
ON Semiconductor FDP075N15A	TO-220-3	-55 °C	175 ░C	N-Channel	100 nC	4 V	20 V	333 W	130 A	10 V	TO-220-3	7.5 mOhm	Through Hole	150 V	MOSFET (Metal Oxide)	7350 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDP075N15A Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources