Discrete Semiconductor Products

SI1305EDL-T1-E3

Obsolete

MOSFET P-CH 8V 860MA SC70-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 860MA SC70-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI1305EDL-T1-E3

Current - Continuous Drain (Id) @ 25°C	860 mA
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	290 mW
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	SC-70-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	450 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI1305EDL-T1-E3	-55 °C	150 °C	Surface Mount	1.8 V 4.5 V	290 mW	8 V	SC-70 SOT-323	SC-70-3	860 mA	280 mOhm	4 nC	MOSFET (Metal Oxide)	P-Channel	450 mV	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 860mA (Ta) 290mW (Ta) Surface Mount SC-70-3

Technical documentation and resources

No documents available