Discrete Semiconductor Products

HN1B04FU-Y(T5L,F,T

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TRANS NPN/PNP 50V 0.15A US6

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Discrete Semiconductor Products

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TRANS NPN/PNP 50V 0.15A US6

Technical Specifications

Parameters and characteristics for this part

Specification	HN1B04FU-Y(T5L,F,T

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	Power - Max [Max]	Package / Case	Mounting Type	Transistor Type
Toshiba Semiconductor and Storage HN1B04FU-Y(T5L,F,T	150 mA	50 V	125 ¯C	100 nA	120	250 mV	150 MHz	US6	200 mW	6-TSSOP SC-88 SOT-363	Surface Mount	1 NPN 1 PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 150MHz 200mW Surface Mount US6

Technical documentation and resources