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SOT363
Discrete Semiconductor Products

PUMD6H-QF

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SOT363
Discrete Semiconductor Products

PUMD6H-QF

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPUMD6H-QF
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition180 MHz, 230 MHz
GradeAutomotive
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]240 mW
QualificationAEC-Q101
Resistor - Base (R1)4.7 kOhms
Supplier Device Package6-TSSOP
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.03

Description

General part information

PUMD6 Series

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 240mW Surface Mount 6-TSSOP

Documents

Technical documentation and resources