Discrete Semiconductor Products

FGM633

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IGBT 600V/18A/VCE1.5V

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Discrete Semiconductor Products

Active

IGBT 600V/18A/VCE1.5V

Technical Specifications

Parameters and characteristics for this part

Specification	FGM633

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	65 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power - Max [Max]	60 W
Reverse Recovery Time (trr)	200 ns
Supplier Device Package	TO-3PF
Td (on/off) @ 25°C	100 ns, 300 ns
Test Condition	30 A, 39 Ohm, 300 V, 15 V
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Power - Max [Max]	Supplier Device Package	Current - Collector Pulsed (Icm)	IGBT Type	Test Condition	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature	Package / Case	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C
Sanken Electric USA Inc. FGM633	60 W	TO-3PF	100 A	Trench	15 V 30 A 39 Ohm 300 V	Through Hole	200 ns	150 °C	TO-3P-3 Full Pack	65 nC	1.7 V	30 A	600 V	100 ns 300 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT Trench 600 V 30 A 60 W Through Hole TO-3PF

Technical documentation and resources