Discrete Semiconductor Products

FQU6N40CTU_NBEA001

Obsolete

MOSFET N-CH 400V 4.5A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 400V 4.5A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQU6N40CTU_NBEA001

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	2.5 W, 48 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FQU6N40CTU_NBEA001	4 V	IPAK TO-251-3 Short Leads TO-251AA	2.5 W 48 W	625 pF	400 V	N-Channel	Through Hole	10 V	20 nC	MOSFET (Metal Oxide)	30 V	4.5 A	IPAK	-55 °C	150 °C	1 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 400 V 4.5A (Tc) 2.5W (Ta), 48W (Tc) Through Hole IPAK

Technical documentation and resources

No documents available