Discrete Semiconductor Products

2SC1815 TIN/LEAD

Obsolete

BIPOLAR TRANSISTORS - BJT 60VCBO 50VCEO 5.0V 150MA 400MA 400MW

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT 60VCBO 50VCEO 5.0V 150MA 400MA 400MW

Technical Specifications

Parameters and characteristics for this part

Specification	2SC1815 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	400 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Package / Case	Power - Max [Max]
Central Semiconductor Corp 2SC1815 TIN/LEAD	-55 ░C	125 °C	100 nA	150 mA	TO-92-3	NPN	50 V	70	250 mV	Through Hole	TO-226AA	TO-226-3 TO-92-3	400 mW
Central Semiconductor Corp 2SC1815-GR PBFREE	-55 ░C	125 °C	100 nA	150 mA	TO-92-3	NPN	50 V	70	250 mV	Through Hole	TO-226AA	TO-226-3 TO-92-3	400 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Mouser	N/A	2500	$ 0.42

General part information

BIPOLAR TRANSISTORS - BJT 60VCBO 50VCEO 5.0V 150MA 400MA 400MW

Technical documentation and resources

No documents available