Specification	RJK0656DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	65 W
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK0656DPB Series

Nch Power MOSFET 60V 40A 5.6mohm LFPAK56

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation RJK0656DPB-00#J5	40 A	SC-100 SOT-669	LFPAK	MOSFET (Metal Oxide)	40 nC	65 W	N-Channel	150 °C	60 V	20 V	Surface Mount	10 V	3000 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources