Discrete Semiconductor Products

RJK1003DPN-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 100V 50A 11MOHM TO-220AB

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 100V 50A 11MOHM TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1003DPN-E0#T2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 100V 50A 11Mohm To-220Ab

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK1003DPN-E0#T2	100 V	150 °C	59 nC	N-Channel	TO-220-3	TO-220AB	20 V	125 W	Through Hole	10 V	MOSFET (Metal Oxide)	11 mOhm	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RJK1003DPN-E0 is a Nch Single Power Mosfet 100V 50A 11Mohm To-220Ab.

Technical documentation and resources