Discrete Semiconductor Products

DTC144EET1

Obsolete

ON Semiconductor

TRANS NPN BIAS RES 50V SC-75

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Discrete Semiconductor Products

DTC144EET1

Obsolete

ON Semiconductor

TRANS NPN BIAS RES 50V SC-75

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DTC144EET1

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DTC144EM3 Series

NPN Bipolar Digital Transistor (BRT)

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Qualification	Grade
ON Semiconductor DTC144EET1G	250 mV	50 V	Surface Mount	200 mW	NPN - Pre-Biased	500 nA	47 kOhms	SC-75 SOT-416	100 mA	SC-75 SOT-416	80	47000 Ohms
ON Semiconductor NSVDTC144EM3T5G	250 mV	50 V	Surface Mount	260 mW	NPN - Pre-Biased	500 nA	47 kOhms	SOT-723	100 mA	SOT-723	80	47000 Ohms	AEC-Q101	Automotive
ON Semiconductor DTC144WET1	250 mV	50 V	Surface Mount	200 mW	NPN - Pre-Biased	500 nA	47 kOhms	SC-75 SOT-416	100 mA	SC-75 SOT-416	80	22 kOhms
ON Semiconductor SDTC144EET1G	250 mV	50 V	Surface Mount	200 mW	NPN - Pre-Biased	500 nA	47 kOhms	SC-75 SOT-416	100 mA	SC-75 SOT-416	80	47000 Ohms	AEC-Q101	Automotive
ON Semiconductor DTC144WET1G	250 mV	50 V	Surface Mount	200 mW	NPN - Pre-Biased	500 nA	47 kOhms	SC-75 SOT-416	100 mA	SC-75 SOT-416	80	22 kOhms
ON Semiconductor DTC144TT1	250 mV	50 V	Surface Mount	230 mW	NPN - Pre-Biased	500 nA	47 kOhms	SC-59	100 mA	SC-59 SOT-23-3 TO-236-3	160 hFE
ON Semiconductor DTC144TT1G	250 mV	50 V	Surface Mount	230 mW	NPN - Pre-Biased	500 nA	47 kOhms	SC-59	100 mA	SC-59 SOT-23-3 TO-236-3	160 hFE
ON Semiconductor DTC144EET1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DTC144EM3 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources