Discrete Semiconductor Products

TK13E25D,S1X(S

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MOSFET N-CH 250V 13A TO220-3

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Discrete Semiconductor Products

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MOSFET N-CH 250V 13A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TK13E25D,S1X(S

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	102 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case
Toshiba Semiconductor and Storage TK13E25D,S1X(S	25 nC	10 V	250 mOhm	N-Channel	TO-220-3	250 V	150 °C	1100 pF	3.5 V	Through Hole	MOSFET (Metal Oxide)	102 W	13 A	20 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 250 V 13A (Ta) 102W (Tc) Through Hole TO-220-3

Technical documentation and resources