Discrete Semiconductor Products

PMV160UPVL

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MOSFET P-CH 20V 1.2A TO236AB

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Discrete Semiconductor Products

Active

MOSFET P-CH 20V 1.2A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV160UPVL

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	335 mW
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Package / Case
Freescale Semiconductor - NXP PMV160UP,215	-55 °C	150 °C	210 mOhm	8 V	1.2 A	1.8 V 4.5 V	P-Channel	Surface Mount	950 mV	20 V	4 nC	MOSFET (Metal Oxide)	365 pF	TO-236AB	2.17 W 335 mW	SC-59 SOT-23-3 TO-236-3
Freescale Semiconductor - NXP PMV160UPVL	-55 °C	150 °C	210 mOhm	8 V	1.2 A	1.8 V 4.5 V	P-Channel	Surface Mount	950 mV	20 V	4 nC	MOSFET (Metal Oxide)	365 pF	TO-236AB	335 mW	SC-59 SOT-23-3 TO-236-3

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General part information

P-Channel 20 V 1.2A (Ta) 335mW (Ta) Surface Mount TO-236AB

Technical documentation and resources