Discrete Semiconductor Products

PMPB25ENEX

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MOSFET DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB25ENEX

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	607 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PMPB25ENEX	Surface Mount	20 V	DFN2020MD-6	24 mOhm	N-Channel	4.5 V 10 V	6-UDFN Exposed Pad	2.1 W	2.5 V	19 nC	10 A	-55 °C	175 ░C	30 V	MOSFET (Metal Oxide)	607 pF
Freescale Semiconductor - NXP PMPB25ENEAX	Surface Mount	20 V	DFN2020MD-6	24 mOhm	N-Channel	4.5 V 10 V	6-UDFN Exposed Pad		2.5 V	19 nC	7.2 A	-55 °C	175 ░C	30 V	MOSFET (Metal Oxide)	607 pF	2.08 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 10A (Ta) 2.1W (Ta) Surface Mount DFN2020MD-6

Technical documentation and resources