Discrete Semiconductor Products
SCT3080KLGC11
ActiveRohm Semiconductor
1200V, 31A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
SCT3080KLGC11
ActiveRohm Semiconductor
1200V, 31A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3080KLGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 165 W |
| Rds On (Max) @ Id, Vgs | 104 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 19.79 | |
Description
General part information
SCT3080KL Series
SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Documents
Technical documentation and resources