Discrete Semiconductor Products

MSRTA600100A

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GeneSiC Semiconductor

DIODE MODULE GP 1KV 600A 3TOWER

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Discrete Semiconductor Products

Active

GeneSiC Semiconductor

DIODE MODULE GP 1KV 600A 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MSRTA600100A

Current - Average Rectified (Io) (per Diode)	600 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-SMD Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
GeneSiC Semiconductor MSRTA600100A	1 Pair Common Cathode	600 A	Standard Recovery >500ns	200 mA	25 µA	Chassis Mount	Three Tower	1.2 V	3-SMD Module	150 °C	-55 °C	1000 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	25	$ 99.26

General part information

Diode Array 1 Pair Common Cathode 1000 V 600A (DC) Chassis Mount 3-SMD Module

Technical documentation and resources