Discrete Semiconductor Products

BAV70HMT116

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DIODE ARRAY GP 80V 215MA SSD3

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Discrete Semiconductor Products

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DIODE ARRAY GP 80V 215MA SSD3

Technical Specifications

Parameters and characteristics for this part

Specification	BAV70HMT116

Current - Average Rectified (Io) (per Diode)	215 mA (DC)
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	500 ns, 200 mA
Supplier Device Package	SSD3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Technology	Mounting Type
Rohm Semiconductor BAV70T216	1.25 V	70 V	1 Pair Common Cathode	2.5 µA	150 °C	200 mA 500 ns	215 mA (DC)	SC-59 SOT-23-3 TO-236-3	4 ns	SSD3	Standard	Surface Mount
Rohm Semiconductor BAV70HMT116	1.25 V	80 V	1 Pair Common Cathode	500 nA	150 °C	200 mA 500 ns	215 mA (DC)	SC-59 SOT-23-3 TO-236-3	4 ns	SSD3	Standard	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.18

General part information

Diode Array 1 Pair Common Cathode 80 V 215mA (DC) Surface Mount TO-236-3, SC-59, SOT-23-3

Technical documentation and resources