Zenode.ai Logo
Beta
BAT54W135
Discrete Semiconductor Products

BC857BWE6327

Active
INFINEON

BIPOLAR GEN PURPOSE TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

BAT54W135
Discrete Semiconductor Products

BC857BWE6327

Active
INFINEON

BIPOLAR GEN PURPOSE TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBC857BWE6327
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]220
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-323, SC-70
Power - Max [Max]250 mW
Supplier Device PackagePG-SOT323
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic0.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 13172$ 0.02
N/A 333000$ 0.03

Description

General part information

BC857 Series

Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323

Documents

Technical documentation and resources

No documents available