Discrete Semiconductor Products

SI3440ADV-T1-GE3

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MOSFET N-CH 150V 2.2A 6TSOP

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Discrete Semiconductor Products

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MOSFET N-CH 150V 2.2A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3440ADV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	80 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	3.6 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI3440ADV-T1-GE3	2.2 A	10 V	7.5 V	6-TSOP	N-Channel	380 mOhm	MOSFET (Metal Oxide)	4 nC	4 V	Surface Mount	-55 °C	150 °C	150 V	80 pF	SOT-23-6 Thin TSOT-23-6	20 V	3.6 W

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General part information

N-Channel 150 V 2.2A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Technical documentation and resources