Discrete Semiconductor Products

BAS45A,133

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DIODE GEN PURP 125V 250MA DO34

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Discrete Semiconductor Products

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DIODE GEN PURP 125V 250MA DO34

Technical Specifications

Parameters and characteristics for this part

Specification	BAS45A,133

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	1 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	1500 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-34
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	125 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Technology	Mounting Type	Speed	Speed	Current - Average Rectified (Io)
Freescale Semiconductor - NXP BAS45A,143	175 °C	4 pF	1 nA	125 V	DO-34	1 V	1500 ns	Axial DO-204AG DO-34	Standard	Through Hole	Standard Recovery >500ns	200 mA	250 mA
Freescale Semiconductor - NXP BAS45A,133	175 °C	4 pF	1 nA	125 V	DO-34	1 V	1500 ns	Axial DO-204AG DO-34	Standard	Through Hole	Standard Recovery >500ns	200 mA	250 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 125 V 250mA Through Hole DO-34

Technical documentation and resources