Discrete Semiconductor Products

BAS216,135

Obsolete

DIODE GEN PURP 75V 250MA SOD110

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 75V 250MA SOD110

Technical Specifications

Parameters and characteristics for this part

Specification	BAS216,135

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOD-110
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-110
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io)	Package / Case	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]
Freescale Semiconductor - NXP BAS21/MI,215
Freescale Semiconductor - NXP BAS216,135	Surface Mount	4 ns	75 V	SOD-110	150 °C	1 µA	200 mA 500 ns	250 mA	SOD-110	Standard	1.5 pF	1.25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 75 V 250mA Surface Mount SOD-110

Technical documentation and resources