Discrete Semiconductor Products

PJD2NA90_L2_00001

NRND

900V N-CHANNEL MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

900V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD2NA90_L2_00001

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	396 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	6.4 Ohm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology
Panjit International Inc. PJD2NA60_L2_00001	4 V	10 V	257 pF	Surface Mount	150 °C	-55 °C	30 V	4.4 Ohm	TO-252AA	34 W	N-Channel	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.7 nC	2 A	MOSFET (Metal Oxide)
Panjit International Inc. PJD2NA90_L2_00001	4 V	10 V	396 pF	Surface Mount	150 °C	-55 °C	30 V	6.4 Ohm	TO-252	50 W	N-Channel	900 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		2 A	MOSFET (Metal Oxide)

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General part information

N-Channel 900 V 2A (Ta) 50W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available