Discrete Semiconductor Products

PSMN021-100YLX

Active

MOSFET N-CH 100V 49A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 100V 49A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN021-100YLX

Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65.6 nC
Input Capacitance (Ciss) (Max) @ Vds	4640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	147 W
Rds On (Max) @ Id, Vgs	21.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology
Freescale Semiconductor - NXP PSMN021-100YLX	49 A	4640 pF	Surface Mount	21.5 mOhm	-55 °C	175 ░C	N-Channel	SC-100 SOT-669	147 W	20 V	10 V	5 V	65.6 nC	2.1 V	100 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 49A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources