Discrete Semiconductor Products

NDH8304P

Obsolete

MOSFET 2P-CH 20V 2.7A SUPERSOT-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 2.7A SUPERSOT-8

Technical Specifications

Parameters and characteristics for this part

Specification	NDH8304P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	23 nC
Input Capacitance (Ciss) (Max) @ Vds	865 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSOP
Package / Case	0.13 in
Package / Case [y]	3.3 mm
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Power - Max [Max]	Configuration	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor NDH8304P	800 mW	2 P-Channel	Surface Mount	SuperSOT™-8	865 pF	Logic Level Gate	23 nC	3.3 mm	8-TSOP	0.13 in	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2.7 A	1 V	70 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	430	$ 0.70

General part information

Mosfet Array 20V 2.7A 800mW Surface Mount SuperSOT™-8

Technical documentation and resources

No documents available