Discrete Semiconductor Products

EMH2801-TL-H

Obsolete

MOSFET P-CH 20V 3A 8EMH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 3A 8EMH

Technical Specifications

Parameters and characteristics for this part

Specification	EMH2801-TL-H

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	320 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	8-EMH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	FET Type	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology
ON Semiconductor EMH2801-TL-H	320 pF	85 mOhm	20 V	1 W	4 nC	150 °C	P-Channel	Surface Mount	8-EMH	3 A	Schottky Diode (Isolated)	1.8 V 4.5 V	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 3A (Ta) 1W (Ta) Surface Mount 8-EMH

Technical documentation and resources

No documents available