Discrete Semiconductor Products

GURB5H60-E3/81

Obsolete

DIODE GEN PURP 600V 5A TO263AB

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DocumentsIRLZ44

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 5A TO263AB

DocumentsIRLZ44

Technical Specifications

Parameters and characteristics for this part

Specification	GURB5H60-E3/81

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division GURB5H60-E3/45	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	150 °C	-55 °C	30 ns	Standard	1.8 V	TO-263AB (D2PAK)	Surface Mount	20 µA	200 mA 500 ns
Vishay General Semiconductor - Diodes Division GURB5H60-E3/81	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	150 °C	-55 °C	30 ns	Standard	1.8 V	TO-263AB (D2PAK)	Surface Mount	20 µA	200 mA 500 ns	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 5A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources