FDMS3622SF121

Obsolete

ON Semiconductor

MOSFET N-CHANNEL POWER56

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Discrete Semiconductor Products

FDMS3622SF121

Obsolete

ON Semiconductor

MOSFET N-CHANNEL POWER56

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS3622SF121

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FDMS3622S Series

Asymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET, 25V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Configuration	Technology	Vgs(th) (Max) @ Id	FET Feature	Supplier Device Package	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS3622S	Surface Mount	-55 °C	150 °C	26 nC	5 mOhm	8-PowerTDFN	2 N-Channel (Dual) Asymmetrical	MOSFET (Metal Oxide)	2 V	Logic Level Gate	Power56	1 W	1570 pF	25 V
ON Semiconductor FDMS3622SF121

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS3622S Series

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

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